AST29GL512Px Series 512Mb Parallel Nor Flash Memory
Features
x8/x16 data bus
Asynchronous 32-byte page read
512-byte programming buffer
-Programming in page multiples up to 512 bytes
Single word/byte and multiple programming options on the same byte
Sector Erase
-Uniform 128KB sectors
Suspend and resume commands for programming and erase operations
Unlock bypass programming mode
Programming acceleration mode (Vpp/WP#)
Status register, data polling and Ready/Busy pins determine device status
Advanced Sector Protection (ASP)
-Volatile and non-volatile protection methods for each sector
One-time programming (OTP) is supported using two lockable areas: a single 1024 byte
Common Flash Interface (CFI) Parameter List
100,000 programming/clear cycles
20 years data retention
Packaging Options
-56-pinTSOP technology
-64-ballFBGA technology
Partial parameters
Single power supply for read/program/erase VCC: 2.7V~3.6V
Wide input/output voltage range VIO: 1.65V~VCC
Operating temperature: -55°C~125°C