NIUDM100D120B2P11G1 1200V, Dual 100A SiC Diode Module
NIUDM100D120B2P11G1 1200V, Dual 100A SiC Diode Module
Product structure: epoxy resin encapsulation
Features: small size, light weight, low current, good sealing, high reliability.
Main applications: electronic circuits for switching, rectification, detecting wave.
Quality grade: industrial grade, military grade
Standard: QZJ840611 Q/QSD20058
Maximum rating
Maximum junction temperature TJM：175℃
Storage temperature TSTG：-55℃～+150℃
Operating Temperature TJOP: -55℃～+125℃
Features: small size, light weight, low current, good sealing, high reliability.
Main applications: electronic circuits for switching, rectification, detecting wave.
Quality grade: industrial grade, military grade
Standard: QZJ840611 Q/QSD20058
Maximum rating
Maximum junction temperature TJM：175℃
Storage temperature TSTG：-55℃～+150℃
Operating Temperature TJOP: -55℃～+125℃
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