Features




35 µ V (maximum, 25 ° C, SOIC package, single/dual/quad)
55 µ V (max, 25 °C, other packages, single/dual/quad)
Temperature drift of the offset voltage:
0.5 µ V/° C (maximum, Class B, SOIC, single/dual/quad)
1.0 µ V/° C (maximum, Class A, SOIC, single/dual/quad)
Low input current: 25 pA (maximum, 25 °C)
Low voltage noise density: 11 nA / Hz (f = 1 kHz)
Input common mode voltage as low as negative supply rail
CMRR: 120 dB (min, 25 ° C)
PSRR: 120 dB (min, full temperature range)
AVOL: 120 dB (min., full temperature range)
Supply current: 1 mA per amplifier
Gain bandwidth product: 3 MHz, stable per unit gain
Single/dual power supply: ±2.25 V to ±18 V, 4.5 V to 36 V

Applications



Precision data acquisition
Instrumentation
Sensor signal conditioning
Industrial control
Communication systems
Smart Grid
 


Partial parameters




Operating Temperature: -40°C～125°C 
Storage temperature: -65°C ~ 150°C
Maximum junction temperature: 150°C