Features




Storage capacity: 8Gb
Storage structure: 512Meg × 16 (64Meg × 16 × 8 banks)
Differential clock inputs: CK and CK# at 800MHz
Programmable CAS Latency (CAS Latency)
Programmable CAS additional latency (Additive Latency)
Programmable burst length: BC4 or BL8
Adjustable Data Output Drive Strength
ODT on-chip impedance matching support
DLL corrects for DQ and DQS variations using CK
Package: BGA96
ESD: 2000V
Humidity sensitivity level: 3 levels


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Partial parameters




Operating voltage: VDD=VDDQ=1.283V~1.45V

Operating voltage compatible VDD=VDDQ=1.5V±0.075V

Temperature range: -55°C to +125°C