AST41J256M16P 4Gb DDR3 Synchronous Dynamic Random Access Memory
AST41J256M16P 4Gb DDR3 Synchronous Dynamic Random Access Memory
Features
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Storage capacity: 4Gbit
Memory structure: 256Mbx16 (32Mbx16x8banks)
8-bit prefetch structure
Differential clock input: CK and CK#, clock frequency 800MHz
Programmable CAS Latency
Programmable CAS Additive Latency
Programmable CAS Write Latency (CWL)
Fixed Burst Length (BL): 8
4-bit Burst Chop Function
Compatible with 1.5V I/O standard (SSTL_ 15)
Package: BGA96
Humidity Sensitivity Level: Class 3
ESD Level: Class 2 (2000V）
Partial parameters
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Operating voltage: VDD=1.5V±0.075V
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VDDQ=1.5V±0.075V
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Temperature range: -55°C to +125°C
Address：Room 101A, 1/F, Public Industrial Building, 56 Hoi Yuen Road, Kwun Tong, Kowloon, Hong Kong 
Phone：
Vicky Zhao:(+86)189 2464 5428 