AST25QW512S Wide Voltage SPI FLASH Memory
AST25QW512S Wide Voltage SPI FLASH Memory
Features
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Supports standard SPI/Dual SPI/Quad SPI instructions
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Supports 4-byte address instruction and 4-byte address mode
Flexible sector structure (4KB/32KB/64KB)
Supports page programming from 1 to 256 bytes in size
User configurable read wait cycle
256-byte page programming time: 0.3ms (typical)
4KB sector erase time: 65ms (typical)
32KB Sector Erase Time: 380ms (typical)
64KB sector erase time: 520ms (typical)
Full Chip Erase Time: 150s (typical)
Erase/write cycles: 100,000
Data retention time: 20 years
Supports SOP16 package form factor
Quality level: Refer to GJB7400 "General Specification for Semiconductor Integrated Circuits for Qualified Manufacturing Facility Certification" for N1 level requirements.
Partial parameters
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Operating voltage: 1.65 V ~ 3.6V
Operating Temperature: -55°C～+105°C
Address：Room 101A, 1/F, Public Industrial Building, 56 Hoi Yuen Road, Kwun Tong, Kowloon, Hong Kong 
Phone：
Vicky Zhao:(+86)189 2464 5428 